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Dr. Ghavam Shahidi
IBM Fellow and Director of Silicon Technology, IBM Thomas J. Watson Research Center, USA
 

Dr. Ghavam Shahidi received his B.S., M.S., and Ph.D. Degrees, all in electrical engineering, from Massachusetts Institute of Technology, USA.  In 1989 he joined the IBM Thomas J. Watson Research Center in Yorktown Heights, New York, where he initiated the Silicon-on Insulator (SOI) development program.  After demonstration of device design and 5-in. SOI material in the IBM Research Division, Dr. Shahidi, along with the SOI development team, moved to the IBM Microelectronics Division’s Advanced Silicon Technology Center (ASTC) in Hopewell Junction, New York.  Over the following years, Dr. Shahidi led the development of SOI CMOS technology at the ASTC.  This work resulted in the development of 8-in. SOI technology infrastructure, demonstration of SOI performance gain, qualification of multiple CMOS SOI technologies and their transfer to manufacturing, establishment of design infrastructure, and the first mainstream use of SOI.  Dr. Shahidi was the Director of High-Performance Logic Development in IBM Microelectronics until 2003.  He is currently the Director of Silicon Technology in IBM Research Division and an IBM Fellow.


 

 

 

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